to-92 plastic-encapsulate transistors 3DK2222A transistor(npn ) features z epitaxial planar die construction maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 75 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current -continuous 600 ma p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in m ax u nit collector-base breakdown voltage v (br)cbo i c = 10ua , i e =0 75 v collector-emitter breakdown voltage v (br)ceo * i c = 10ma , i b =0 40 v emitter-base breakdown voltage v (br)ebo i e = 10ua, i c =0 6 v collector cut-off current i cbo v cb = 60 v , i e =0 10 na collector cut-off current i cex v ce = 60 v , v eb(off) =3v 10 na emitter cut-off current i ebo v eb = 3 v , i c =0 10 na h fe(1) v ce =10 v, i c = 150ma 100 300 h fe(2) v ce =10 v, i c = 0.1ma 40 dc current gain h fe(3) v ce =10 v, i c = 500ma 42 v ce(sat)(1) i c = 500ma, i b = 50ma 0.6 v collector-emitter saturation voltage v ce(sat)(2) i c = 150ma, i b = 15ma 0.3 v base-emitter saturation voltage v be(sat) i c = 500ma, i b = 50ma 1.2 v delay time t d 10 ns rise time t r v cc =30v, i c =150ma v be(off) =-0.5v,i b1 =15ma 25 storage time t s 225 fall time t f v cc =30v, i c =150ma i b1 =- i b2 = 15ma 60 transition frequency f t v ce =20 v, i c =20ma,f =100mhz 300 mhz * pulse test classification of h fe(1) rank l h range 100-200 200-300 to ? 92 1.emitter 2.base 3.collector 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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